Start typing and press Enter to search

This website does not support Internet Explorer. For a correct visualization we recommend to use Microsoft Edge or Google Chrome.

Optical metrology

Improving the measurement of thick and thin films with optical profiling techniques

Optical metrology
软件副总裁,物理学博士(光学工程),电信技术工程,电子工程 at Sensofar Metrology

2004 年成为 Sensofar 的合伙人。
Cristina 是经验丰富的研发专家,自 1996 年起便在 CD6 担任研发工程师,而自 Sensofar Tech SL 于 2001 年成立以来,她一直担任软件经理,并自 2017 年起担任软件副总裁。她的研究方向包括光学测量、表面形貌测量学、图像处理和计算科学。她从 2010 年起开始研发三维 (3D) 形貌分析在枪支分析中的使用。

Improving the measurement of thick and thin films with optical profiling techniques full article
Cristina Cadevall1, C. Oriach-Font1, Roger Artigas1, Agustí Pintó1, Ferran Laguarta1
1Universitat Politècnica de Catalunya (UPC) Rambla Sant Nebridi, 10, E-08222 Terrassa, Spain.
Proceedings Volume 6616, Optical Measurement Systems for Industrial Inspection V; 66161Z (2007)
Event: Optical Metrology, 2007, Munich, Germany


Optical profiling techniques, mainly confocal and white light interferometry, have demonstrated to be suitable techniques for characterization of transparent thick films. Measurements are carried out by vertically scanning the upper and lower film interfaces. Thickness of the layer is determined from the two peaks in the confocal axial response or from the two sets of interference fringes developed during the vertical scan. The 3D topographies of the upper and lower interfaces of the film can also be obtained. Measurements of photoresists or oxide coatings are typical examples of thick film characterization. On the other hand, measurement of thin films is considered to be a very difficult application to carry out with most optical imaging profilers. A film should be considered as thin when the two peaks obtained along the vertical scan become unresolved. We introduce new methods based on confocal techniques, which make it possible to measure sub-micrometric layers on structured samples. These techniques are based on the comparison between the axial responses obtained in areas where the film is present and those in other areas where only the substrate is present. This method has been successfully used for thickness assessment of several samples, such as a set of calibrated Si-SiO2 layers.